International Journal of Photoenergy / 2012 / Article / Fig 4

Research Article

Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Figure 4

Comparison of surface and cross-section (insets) SEM images of CIGS films selenized from Cu-rich precursor films (left column) and Cu-poor precursor films (right column) at different selenization temperatures: (a), (f) 400°C; (b), (g) 450°C; (c); (h) 500°C, (d), (i) 550°C; (e), (j) 600°C.
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