Preparation and Characterization of Cu(In,Ga)Se₂ Thin Films by Selenization of Cu_0.8Ga_0.2 and In₂Se₃ Precursor Films

Figure 4

Comparison of surface and cross-section (insets) SEM images of CIGS films selenized from Cu-rich precursor films (left column) and Cu-poor precursor films (right column) at different selenization temperatures: (a), (f) 400°C; (b), (g) 450°C; (c); (h) 500°C, (d), (i) 550°C; (e), (j) 600°C.