Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells

Table 1

Deposition potential, composition, thickness, and bandgap of the CZTSO thin films.

Sample	Potential (V)	Cu (at %)	Zn (at %)	Sn (at %)	S (at %)	O (at %)	Thickness (𝜇m)	Bandgap (eV)
A	V = −0.8	28.2	9.4	12.9	19.8	29.7	~0.5	2.1
B	V = −0.8~−0.5	28.4	11.3	8.8	30.9	20.6	~0.3	1.6
C	V = −0.9~−0.5	27.6	8.4	14.8	40.9	8.4	~0.3	1.6
D	V = −1.0~−0.5	22.6	16.3	13.0	28.8	19.2	~0.3	1.5
E	V = −1.1~−0.5	23.6	17.4	13.2	26.0	19.6	~0.3	1.6