Crystal Growth Behaviors of Silicon during Melt Growth Processes

Figure 18

Schematic images of growth of Si ⟨110⟩ dendrite [73]. (a) Equilibrium form of crystal with two twins, which is similar to that shown in Figure 17(a). It is considered that the crystal grows only in the ⟨110⟩ direction. Reentrant type I corners appear at both twin₁ and twin₂. This is markedly different from the growth of the ⟨112⟩ dendrite. (b) Triangular corners are formed owing to the rapid growth at both twins. (c) Crystal growth can continue on the {111} flat surface. When triangular crystals propagate across another twin, two new type I corners are formed at both twins. (d) Rapid growth occurs at the two type I corners again, and a triangular corner is formed. (e) After the propagation of the triangular crystals, type I corners are formed at both twins. A faceted dendrite continues to grow along the ⟨110⟩ direction by repeating the process from (b) to (e). The tip of the ⟨110⟩ dendrite remains narrow during crystal growth.

(a)

(b)

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(d)

(e)