Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells

<table><svg height="13.6375" id="M35" style="vertical-align:-1.97925pt" version="1.1" viewbox="0 0 26.5625 13.6375" width="26.5625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.113)"><use xlink:href="#x1D43D"></use></g><g transform="matrix(.017,-0,0,-.017,7.831,11.113)"><path d="M300 253l-14 -55h-229l14 55h229z" id="x2D"></path></g><g transform="matrix(.017,-0,0,-.017,13.882,11.113)"><use xlink:href="#x1D449"></use></g>
</svg> characteristics of GaN/InGaN double-heterostructure photovoltaic cells under experimental measurement and theoretical simulation.</table>

International Journal of Photoenergy

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Figure 4

Figure 4: Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells 