Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells

Table 2

Photovoltaic properties of GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10%, 12%, and 14% under experimental measurement and theoretical simulation.

GaN/InGaN PV cells	In = 10%		In = 12%		In = 14%
	Simulation	Experiment	Simulation	Experiment	Simulation	Experiment
𝑉OC (V)	2.66	2.07	2.59	1.83	2.55	1.57
𝐽SC (mA/cm^2)	0.72	0.31	0.83	0.42	0.94	0.46
FF (%)	94.54	80.16	94.43	69.09	94.35	41
η (%)	1.80	0.51	2.04	0.53	2.27	0.3