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International Journal of Photoenergy
Volume 2012, Article ID 235971, 6 pages
http://dx.doi.org/10.1155/2012/235971
Research Article

Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering

College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

Received 21 March 2012; Revised 15 June 2012; Accepted 15 June 2012

Academic Editor: Raghu N. Bhattacharya

Copyright © 2012 Dan Leng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Tin oxide SnO2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO2 property have been investigated to obtain relatively high-resistivity SnO2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%~10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO2 films. Electrical measurement suggests that the film resistivity decreases with the increase of oxygen pressure. The SnO2 films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO2 films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.