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International Journal of Photoenergy
Volume 2012 (2012), Article ID 254946, 5 pages
http://dx.doi.org/10.1155/2012/254946
Research Article

Raman Amplifier Based on Amorphous Silicon Nanoparticles

1Institute for Microelectronics and Microsystems, National Research Council, Via P. Castellino 111, 80131 Napoli, Italy
2Division of Materials Science and Engineering, Boston University, 15 Saint Mary's Street, Brookline, MA 02446, USA
3Department of Electrical & Computer Engineering, Boston University, 8 Saint Mary's Street, Boston, MA 02215-2421, USA

Received 9 June 2011; Accepted 20 July 2011

Academic Editor: Fabrice Gourbilleau

Copyright © 2012 M. A. Ferrara et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.