The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells

<table>Optical model used for a-Si : H(p) layer formed on Si(100) substrates. The thickness for surface roughness layer, a-Si : H(p) layer, and SiO<sub>2</sub> layer is denoted as <i>d<sub>s</sub></i>, <i>d<sub>b</sub></i>, and <svg height="16.487499" id="M20" style="vertical-align:-3.41931pt" version="1.1" viewbox="0 0 27.825001 16.487499" width="27.825001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,12.162)"><use xlink:href="#x1D451"></use></g>
<g transform="matrix(.012,-0,0,-.012,9.5,16.25)"><use xlink:href="#x53"></use></g><g transform="matrix(.012,-0,0,-.012,15.069,16.25)"><use xlink:href="#x69"></use></g><g transform="matrix(.012,-0,0,-.012,18.257,16.25)"><use xlink:href="#x4F"></use></g>
</svg>, respectively. The back-surface of the Si(100) substrate was roughened to eliminate back-side light reflection.</table>

International Journal of Photoenergy

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Figure 1

Figure 1: The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells 