Amorphous Silicon Single-Junction Thin-Film Solar Cell Exceeding 10% Efficiency by Design Optimization

Table 1

The input parameters used in modeling the single-junction a-Si: H solar cell.

Material/parameters	SnO2:F	p-layer; a-SiC:H	p- (buffer) layer; a-SiC:H	i-layer; a-Si:H	n-layer; a-Si:H	ZnO:B
𝑊 (nm)	50–150	10–20	2–9	100–1300	15–30	50–200
𝜀𝑟	9	11.9	11.9	11.9	11.9	9
𝜇𝑛 (cm^2/Vs)	60	20.0	20.0	20.0	20.0	33
𝜇𝑝 (cm^2/Vs)	6	2.0	2.0	2.0	2.0	8
𝑁𝑎 (cm^−3)	1.3×10^19	3.0×10^18	6.0×10^18	—	—	—
𝑁𝑑 (cm^−3)	—	—	—	—	8.0×10^19	8.0×10^18
𝐸𝑔 (eV)	3.7	1.9	1.9	1.65–1.95	1.75	3.3
𝑁𝑐 (cm^−3)	2.2×10^18	2.5×10^20	2.5×10^20	2.5×10^20	2.5×10^20	2.2×10^18
𝑁𝑣 (cm^−3)	1.8×10^19	2.5×10^20	2.5×10^20	2.5×10^20	2.5×10^20	1.8×10^19
𝜒 (eV)	4.8	4.0	3.8	4.0	3.8	4.5