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International Journal of Photoenergy
Volume 2012, Article ID 513238, 5 pages
Research Article

Microcrystalline-Silicon-Oxide-Based N-Type Reflector Structure in Micromorph Tandem Solar Cells

Photovoltaic Technology Division, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan

Received 21 October 2011; Accepted 14 December 2011

Academic Editor: Shahed Khan

Copyright © 2012 Chiung-Nan Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


N-type microcrystalline silicon oxide thin films (n- 𝜇 c- S i O 𝑥 :H) have been deposited by VHF-PECVD (40 MHz) with reactant gas mixtures of C O 2 / S i H 4 and H 2 . N- 𝜇 c- S i O 𝑥 thin films exhibiting low refractive index value ( n 6 0 0 n m 2 ), and medium/high conductivity ( 1 0 9  S/cm) are suitable to be used as an “n-type reflector” in micromorph tandem solar cells. Transmission electron microscopy (TEM) results show that microstructures of n- 𝜇 c- S i O 𝑥 :H thin films contain nanocrystalline Si particles, which are randomly embedded in the a- S i O 𝑥 matrix. This specific microstructure provides n- 𝜇 c- S i O 𝑥 :H thin films excellent optoelectronic properties; therefore, n- 𝜇 c- S i O 𝑥 :H thin films are appropriate candidates for “n-type reflector” structures in Si tandem solar cells.