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International Journal of Photoenergy
Volume 2012, Article ID 614320, 4 pages
http://dx.doi.org/10.1155/2012/614320
Research Article

Effects of Controlling the AZO Thin Film's Optical Band Gap on AZO/MEH-PPV Devices with Buffer Layer

1Department of Advanced Chemicals and Engineering, Chonnam National University, Gwangju 500-757, Republic of Korea
2Photovoltaic and Optoelectronic Device Center, Korea Photonics Technology Institute, Gwangju 500-460, Republic of Korea
3THELEDS Co., Gwangju 506-253, Republic of Korea

Received 31 August 2011; Accepted 27 December 2011

Academic Editor: Bhushan Sopori

Copyright © 2012 Jaehyoung Park et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Organic/inorganic hybrid solar cells were fabricated incorporating aluminum-doped zinc oxide (AZO) thin films of varying optical band gap in AZO/poly(2-methoxy-5-( -ethyl-hexyloxy)-p-phenylene vinylene) structures. The band gaps were controlled by varying the flow rates of Ar and used to deposit the AZO. Devices with CdS buffer layer were also fabricated for improved efficiency. The effects of AZO optical band gap were assessed by testing the IV characteristics of devices with structures of glass/ITO/AZO/MEH-PPV/Ag under AM1.5 illumination (100 mW/cm2). Efficiency was improved about 30 times by decreasing the AZO optical band gap, except in devices deposited without oxygen. A power conversion efficiency of 0.102% was obtained with the incorporation of a CdS buffer layer.