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International Journal of Photoenergy
Volume 2012, Article ID 643895, 8 pages
Research Article

Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD

Department of Materials Science and Engineering, Inha University, Incheon, Republic of Korea

Received 29 August 2011; Revised 26 November 2011; Accepted 5 January 2012

Academic Editor: Junsin Yi

Copyright © 2012 Jong-Ick Son et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This study examined the effects of film thickness on the nanostructural, chemical, and mechanical features of nc-Si:H films deposited by plasma-enhanced chemical vapor deposition. SiH4 and H2 were used as the source gases, and the deposition time was varied from 10 to 360 min. The mean nanocrystallites size in the Si films increased from ~6 to ~8 nm with increasing film thickness from 85 to 4150 nm. Moreover, the nanocrystallite concentration and elastic modulus increased from ~7.5 to ~45% and from 135 to 147 Gpa, respectively. In the 4150 nm thick film, the relative volume fraction of Si nanocrystallites and relative fraction of Si–H bonds in the films were approximately ~45% and ~74.5%, respectively.