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International Journal of Photoenergy
Volume 2012, Article ID 670981, 7 pages
Research Article

High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process

1Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
2Inventec Solar Energy Coporation, Taoyuan 335, Taiwan

Received 11 July 2012; Revised 13 November 2012; Accepted 17 November 2012

Academic Editor: Man Shing Wong

Copyright © 2012 Chien-Ming Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We introduce a novel, high-throughput processing method to produce high-efficiency solar cells via a backside rounding process and ion implantation. Ion implantation combined with a backside rounding process is investigated. The ion implantation process substituted for thermal POCl3 diffusion performs better uniformity (<3%). The U-4100 spectrophotometer shows that wafers with backside rounding process perform higher reflectivity at long wavelengths. Industrial screen printed (SP) Al-BSF on different etching depth groups was analyzed. SEMs show that increasing etch depth improves back surface field (BSF). The - measurement revealed that etching depths of 6 μm ± 0.1 μm due to having the highest and , it has the best performance. SEMs also show that higher etching depths also produce uniform Al melting and better BSF. This is in agreement with IQE response data at long wavelengths.