Research Article
Gas Nozzle Effect on the Deposition of Polysilicon by Monosilane Siemens Reactor
Table 1
Experimental conditions and results.
| | Experimental data | Nozzle type A | Nozzle type B |
| | Initial rod size (mm) | 7 (square)*2100(H) | 7 (square)*2100(H) | | Rod temperature (°C) | 850 | 850 | | Reactor pressure (kgf·cm−2) | 3.5 | 3.5 | | SiH4 flow rate (l·min−1) | 5 to 40 | 5 to 40 | | SiH4 concentration (%) | 4 | 4 |
| | Run time (h) | 55.3 | 55.5 | | Silicon deposition thickness (mm) | 45.21 | 62.6 | | Deposited silicon (mm·h−1) | 0.69 | 1 | | Energy consumption (kWh·kg−1) | 111 | 72 |
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