Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching
Figure 6
Reflectance spectra of various SNW/p-Si(100) structures with SNW lengths of 600, 900, and 10000 nm. Etching conditions were aqueous AgNO3/HF/H2O mixture chemical solution in a ratio of 4 : 34 : 162 (volume) at 25°C for (a) 1.5, (b) 3, and (c) 30 min. Reflectance spectrum of p-type planar Si(100) wafer is shown as reference. An integrating sphere was used to ensure that all reflected light was captured over all angles. The diameter of integrating sphere is 60 mm.
