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International Journal of Photoenergy
Volume 2012, Article ID 732647, 4 pages
Research Article

Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements

1Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 10, 61600 Brno, Czech Republic
2Technology division, Solartec s.r.o., Televizni 2618, 756 61 Rožnov pod Radhoštěm, Czech Republic

Received 19 June 2011; Accepted 23 January 2012

Academic Editor: Bhushan Sopori

Copyright © 2012 M. Solcansky et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


For the measurement of the minority carrier bulk-lifetime the characterization method MW-PCD is used, where the result of measurement is the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.