Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

<table>Variation of effective lifetime and interface trap density (<svg height="15.4" id="M22" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 21.075001 15.4" width="21.075001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>) as a function of rapid thermal annealing temperature.</table>

International Journal of Photoenergy

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Figure 2

Figure 2: Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications 