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International Journal of Photoenergy
Volume 2012 (2012), Article ID 768605, 8 pages
Review Article

Epitaxial Growth of Germanium on Silicon for Light Emitters

1Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, China
2Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China

Received 30 June 2011; Revised 20 August 2011; Accepted 24 August 2011

Academic Editor: Fabrice Gourbilleau

Copyright © 2012 Chengzhao Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.