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International Journal of Photoenergy
Volume 2012, Article ID 782835, 5 pages
Research Article

Heteroepitaxial Growth of Ge Nanowires on Si Substrates

1MATIS IMM CNR, Via S. Sofia 64, 95123 Catania, Italy
2Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
3IMM CNR, VIII Strada 5, 95121 Catania, Italy

Received 26 September 2011; Revised 11 November 2011; Accepted 14 November 2011

Academic Editor: Fabrice Gourbilleau

Copyright © 2012 Pietro Artoni et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates. Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112]). NWs are faceted, exhibiting the lower energy plans on the surface. The faceting depends on the growth direction. Moreover, the detrimental effects for Ge NWs growth of O atoms contamination are discussed. Finally, we describe how a proper preparation of the Au catalyst is able to increase the Ge NW density by a factor of 4, while heteroepitaxy and faceting features are maintained.