New Results in Optical Modelling of Quantum Well Solar Cells
Figure 9
(a) Voltage-current characteristic (line) and the output power (points) of the cell with the following MQW system: GaAs/Al0.3Ga0.7As, , nm, nm and the antireflecting coating depth nm. (b) The MQW cell efficiency depending on the antireflecting coating depth. The dotted line indicates the ideal cell efficiency with zero reflectance. (c) The efficiency of MQW cell based on the number of quantum wells.