Quantification of Power Losses of the Interdigitated Metallization of Crystalline Silicon Thin-Film Solar Cells on Glass

<table>An interdigitated metallization of a poly-Si thin-film solar cell on a glass superstrate. (a) A top-down, “macro” schematic view of a interdigitated-metallized solar cell. The emitter and BSF busbars are used to transport current to an external contact lead, or in the case of series-interconnected modules, to the next cell in the series. (b) An isometric cross-section of an emitter finger, sidewalls, and local BSF finger area. Light (indicated as <svg height="12.4375" id="M3" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 17.049999 12.4375" width="17.049999" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,12.162)"><path d="M499 88q-41 -46 -83.5 -73t-68.5 -27q-41 0 -19 98l52 225q10 43 8 59.5t-16 16.5q-37 0 -112 -65t-117 -135q-14 -42 -38 -179q-36 -7 -75 -20l-7 8l127 594q8 40 2.5 49t-35.5 9h-35l5 25q36 3 71.5 13t56.5 18t25 8q11 0 3 -38l-88 -417h2q77 102 195 167q44 24 79 24
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</svg>) enters from the glass side of the cell.</table>

International Journal of Photoenergy

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Figure 1

Figure 1: Quantification of Power Losses of the Interdigitated Metallization of Crystalline Silicon Thin-Film Solar Cells on Glass 