High Improvement in Conversion Efficiency of <i>μ</i>c-SiGe Thin-Film Solar Cells with Field-Enhancement Layers

<table>(a) Raman spectra of <i>μ</i>c-Si<sub>1−<i>x </i></sub>Ge<i><sub>x</sub></i>:H films deposited at different [GeH<sub>4</sub>]/[SiH<sub>4</sub>] ratios. (b) The Ge content of <i>μ</i>c-Si<sub>1−<i>x </i></sub>Ge<i><sub>x</sub></i>:H films deposited at different [GeH<sub>4</sub>] estimated from Raman spectra.</table>

International Journal of Photoenergy

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Figure 2: High Improvement in Conversion Efficiency of <i>μ</i>c-SiGe Thin-Film Solar Cells with Field-Enhancement Layers 

International Journal of Photoenergy

High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers

Figure 2