Research Article
High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers
Table 1
Material parameters.
| | Parameters | μc-Si0.9Ge0.1:H | μc-Si:H | | FEL = 0 nm | FEL = 100 nm | FEL = 200 nm | FEL = 300 nm |
| | Optical gap (eV) | 1.24 | 1.3 | | Elec. mob. (cm2/Vs) | 20 | 30 | | Hole mob. (cm2/Vs) | 2 | 2 | | Con. Band DOS (cm−3) | 1 × 1020 | 1 × 1020 | | Val. Band DOS (cm−3) | 1 × 1020 | 1 × 1020 | | Hole life-time (s) | 5.0 × 10−10 | 1.2 × 10−9 | 1.7 × 10−9 | 8.0 × 10−10 | 1 × 10−7 |
| | Tail states density factor: | | | | | | | Con. Band (cm−3/eV) | 5.0 × 1019 | 5.2 × 1019 | 5.3 × 1019 | 5.6 × 1019 | 1.0 × 1019 | | Val. Band (cm−3/eV) | 5.0 × 1019 | 5.2 × 1019 | 5.2 × 1019 | 5.3 × 1019 | 1.0 × 1019 |
| | Tail states charact. energy: | | | | | | | Con. Band (eV) | 0.027 | 0.027 | | Val. Band (eV) | 0.045 | 0.045 |
| | Accepter-like Gaussian defect states: | | | | | | | Below con. band (eV) | 0.4 | 0.4 | | Decay energy (eV) | 0.2 | 0.2 | | DOS (cm−3/eV) | 7.0 × 1016 | 7.0 × 1016 | 7.0 × 1016 | 7.1 × 1016 | 1.0 × 1015 |
| | Donor-like Gaussian defect states: | | | | | | | Above val. band (eV) | 0.45 | 0.45 | | Decay energy (eV) | 0.2 | 0.2 | | DOS (cm−3/eV) | 7.0 × 1016 | 1.0 × 1015 |
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