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International Journal of Photoenergy
Volume 2012 (2012), Article ID 858350, 7 pages
http://dx.doi.org/10.1155/2012/858350
Research Article

Current Mechanism in H f O 2 -Gated Metal-Oxide-Semiconductor Devices

Department of Physics, Faculty of Sciences and Arts, Batman University, 72000 Batman, Turkey

Received 9 January 2012; Revised 27 March 2012; Accepted 10 April 2012

Academic Editor: Xie Quan

Copyright © 2012 Osman Pakma. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Osman Pakma, “Current Mechanism in -Gated Metal-Oxide-Semiconductor Devices,” International Journal of Photoenergy, vol. 2012, Article ID 858350, 7 pages, 2012. doi:10.1155/2012/858350