Current Mechanism in <svg style="vertical-align:-4.50008pt;width:48.424999px;" id="M1" height="21.0375" version="1.1" viewBox="0 0 48.424999 21.0375" width="48.424999"  xmlns="http://www.w3.org/2000/svg">
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</svg>-Gated Metal-Oxide-Semiconductor Devices

<table>Richardson plots of the ln(<svg height="20.0625" id="M40" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 38.887501 20.0625" width="38.887501" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,32.488,7.613)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g>
</svg>) versus 1/<i>T</i> for the Al/HfO<sub>2</sub>/p-Si (MOS) structure.</table>

International Journal of Photoenergy

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Figure 4

Figure 4: Current Mechanism in <svg style="vertical-align:-4.50008pt;width:48.424999px;" id="M1" height="21.0375" version="1.1" viewBox="0 0 48.424999 21.0375" width="48.424999"  xmlns="http://www.w3.org/2000/svg">
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International Journal of Photoenergy

Current Mechanism in H f O 2 -Gated Metal-Oxide-Semiconductor Devices

Figure 4

Current Mechanism in -Gated Metal-Oxide-Semiconductor Devices