Current Mechanism in <svg style="vertical-align:-4.50008pt;width:48.424999px;" id="M1" height="21.0375" version="1.1" viewBox="0 0 48.424999 21.0375" width="48.424999"  xmlns="http://www.w3.org/2000/svg">
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</svg>-Gated Metal-Oxide-Semiconductor Devices

<table>The variation of the series resistance of the Al/HfO<sub>2</sub>/p-Si (MOS) structure as a function of the bias voltage for various temperatures.</table>

International Journal of Photoenergy

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Figure 9

Figure 9: Current Mechanism in <svg style="vertical-align:-4.50008pt;width:48.424999px;" id="M1" height="21.0375" version="1.1" viewBox="0 0 48.424999 21.0375" width="48.424999"  xmlns="http://www.w3.org/2000/svg">
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International Journal of Photoenergy

Current Mechanism in H f O 2 -Gated Metal-Oxide-Semiconductor Devices

Figure 9

Current Mechanism in -Gated Metal-Oxide-Semiconductor Devices