Research Article
Current Mechanism in -Gated Metal-Oxide-Semiconductor Devices
Table 2
Temperature-dependent values of various parameters obtained from the J-V characteristics of the Al/HfO2/p-Si structure.
| T (K) | Gate injection | Substrate injection | | n | | | n | |
| 100 | 0.482 | 1.71 | 2.92 | 0.342 | 1.66 | 2.75 | 120 | 0.522 | 1.72 | 2.96 | 0.387 | 1.67 | 2.79 | 140 | 0.561 | 1.72 | 2.97 | 0.431 | 1.68 | 2.83 | 160 | 0.602 | 1.73 | 3.01 | 0.474 | 1.70 | 2.88 | 180 | 0.641 | 1.76 | 3.09 | 0.516 | 1.71 | 2.92 | 200 | 0.683 | 1.77 | 3.13 | 0.556 | 1.72 | 2.97 | 220 | 0.725 | 1.79 | 3.19 | 0.591 | 1.74 | 3.03 | 240 | 0.763 | 1.80 | 3.24 | 0.627 | 1.76 | 3.10 | 260 | 0.807 | 1.81 | 3.27 | 0.666 | 1.77 | 3.15 | 280 | 0.850 | 1.82 | 3.32 | 0.703 | 1.79 | 3.22 | 300 | 0.895 | 1.84 | 3.38 | 0.739 | 1.81 | 3.29 | 320 | 0.936 | 1.85 | 3.41 | 0.778 | 1.83 | 3.36 |
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