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International Journal of Photoenergy
Volume 2012, Article ID 890284, 6 pages
http://dx.doi.org/10.1155/2012/890284
Research Article

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

1Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan
2Department of Materials Science and Engineering, MingDao University, ChungHua 52345, Taiwan
3Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan

Received 1 June 2011; Accepted 17 October 2011

Academic Editor: Leonardo Palmisano

Copyright © 2012 Chao-Chun Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. R. L. Stolk, H. Li, R. H. Franken et al., “Improvement of the efficiency of triple junction n-i-p solar cells with hot-wire CVD proto- and microcrystalline silicon absorber layers,” Thin Solid Films, vol. 516, no. 5, pp. 736–739, 2008. View at Publisher · View at Google Scholar · View at Scopus
  2. R. E. I. Schropp, H. Li, R. H. J. Franken et al., “Nanostructured thin films for multibandgap silicon triple junction solar cells,” Solar Energy Materials and Solar Cells, vol. 93, no. 6-7, pp. 1129–1133, 2009. View at Publisher · View at Google Scholar · View at Scopus
  3. H. Kawauchi, M. Isomura, T. Matsui, and M. Kondo, “Microcrystalline silicon-germanium thin films prepared by the chemical transport process using hydrogen radicals,” Journal of Non-Crystalline Solids, vol. 354, no. 19-25, pp. 2109–2112, 2008. View at Publisher · View at Google Scholar · View at Scopus
  4. Z. Tang, W. Wang, D. Wang, D. Liu, Q. Liu, and D. He, “The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD,” Journal of Alloys and Compounds, vol. 504, no. 2, pp. 403–406, 2010. View at Publisher · View at Google Scholar · View at Scopus
  5. Q. H. Fan, C. Chen, X. Liao et al., “High efficiency silicon-germanium thin film solar cells using graded absorber layer,” Solar Energy Materials and Solar Cells, vol. 94, no. 7, pp. 1300–1302, 2010. View at Publisher · View at Google Scholar · View at Scopus
  6. X. Liao, H. Povolny, P. Agarwal, and X. Deng, “Raman and IR study of narrow bandgap A-SiGe and μC-SiGe films deposited using different hydrogen dilution,” in Proceedings of the 29th IEEE Photovoltaic Specialists Conference, pp. 1150–1153, May 2002.
  7. J. Tauc and A. Menth, “States in the gap (of chalcogenide glasses),” Journal of Non-Crystalline Solids, vol. 8–10, pp. 569–585, 1972. View at Google Scholar
  8. F. Urbach, “The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids,” Physical Review, vol. 92, no. 5, p. 1324, 1953. View at Publisher · View at Google Scholar · View at Scopus
  9. Y. H. Wang, J. Lin, and C. H. A. Huan, “Structural and optical properties of a-Si:H/nc-Si:H thin film,” Materials Science and Engineering B, vol. 104, no. 1-2, pp. 80–87, 2003. View at Publisher · View at Google Scholar · View at Scopus
  10. S. R. Jadkar, J. V. Sali, S. T. Kshirsagar, and M. G. Takwale, “Narrow band gap, high photosensitivity a-SiGe:H films prepared by hot wire chemical vapor deposition (HW-CVD) method,” Materials Letters, vol. 52, no. 6, pp. 399–403, 2002. View at Publisher · View at Google Scholar · View at Scopus
  11. W. Paul, J. H. Chen, E. Z. Liu, A. E. Wetsel, and P. Wickboldt, “Structural and electronic properties of amorphous SiGe:H alloys,” Journal of Non-Crystalline Solids, vol. 164–166, no. 1, pp. 1–10, 1993. View at Google Scholar · View at Scopus
  12. A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Physical Review B, vol. 45, no. 23, pp. 13367–13377, 1992. View at Publisher · View at Google Scholar · View at Scopus
  13. M. H. Brodsky, M. Cardona, and J. J. Cuomo, “Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering,” Physical Review B, vol. 16, no. 8, pp. 3556–3571, 1977. View at Publisher · View at Google Scholar · View at Scopus
  14. B. P. Nelson, Y. Xu, D. L. Williamson et al., “Hydrogenated amorphous silicon germanium alloys grown by the hot-wire chemical vapor deposition technique,” Materials Research Society Symposium Proceedings, vol. 507, pp. 447–452, 1998. View at Google Scholar
  15. R. E. I. Schropp, M. B. von der Linden, J. Daey Ouwens, and H. de Gooijer, “Apparent “gettering” of the Stabler-Wronski effect in amorphous silicon solar cells,” Solar Energy Materials and Solar Cells, vol. 34, no. 1–4, pp. 455–463, 1994. View at Google Scholar · View at Scopus
  16. V. Nádaždy, R. Durný, I. Thurzo, and E. Pinčík, “New experimental facts on the Staebler-Wronski effect,” Journal of Non-Crystalline Solids, vol. 227–230, no. 1, pp. 316–319, 1998. View at Google Scholar · View at Scopus