High-Temperature Photovoltaic Effect in Heterojunction
Figure 2
Photovoltaic responses for LCMO/SiOx/Si heterojunction at different temperature from 300 to 673 K under the 248 nm laser illumination recorded by an oscilloscope terminated into (a) 1 MΩ and (c) 50 Ω. The insets of (a) and (c) display the schematic measurement circuits. (b) and (d) present the dependence of PV peak values and on the temperature, respectively. The insets display the temperature dependence of rising time and of PV pulses shown in (a) and (c).
