Simulation of Nonpolar p-GaN/i-In_𝑥Ga_1−𝑥N/n-GaN Solar Cells

Table 2

The optimum In-composited combination of two graded layers for each In composition of In_xGa_1−x N pin solar cells.

The In composition of InxGa1−x N intrinsic layer (corresponding energy bandgap eV)	0.4 (1.98)	0.45 (1.83)	0.5 (1.69)	0.55 (1.56)	0.6 (1.44)	0.65 (1.32)	0.7 (1.21)	0.75 (1.11)
The In composition of the 1st graded layer	0.15 (2.81)	0.15 (2.81)	0.15 (2.81)	0.15 (2.81)	0.2 (2.63)	0.2 (2.63)	0.2 (2.63)	0.25 (2.46)
The In composition of the 2nd graded layer	0.3 (2.29)	0.3 (2.29)	0.3 (2.29)	0.35 (2.13)	0.4 (1.98)	0.4 (1.98)	0.45 (1.83)	0.5 (1.69)