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International Journal of Photoenergy
Volume 2012 (2012), Article ID 917020, 6 pages
Research Article

Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si

1Electronics and Communications Department, Arab Academy for Science, Technology and Maritime Transport, P.O. Box 1029, Alexandria, Egypt
2Department of Materials Science, Institute of Graduate Studies and Research, Alexandria University, P.O. Box 832, Alexandria, Egypt

Received 1 March 2012; Accepted 16 May 2012

Academic Editor: Panagiotis Lianos

Copyright © 2012 I. Morsi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Polyaniline/n-type Si heterojunctions solar cell are fabricated by spin coating of soluble dodecylbenzene sulfonic acid (DBSA)-doped polyaniline onto n-type Si substrate. The electrical characterization of the Al/n-type Si/polyaniline/Au (Ag) structure was investigated by using current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy under darkness and illumination. The photovoltaic cell parameters, that is, open-circuit voltage (), short-circuit current density (), fill factor (FF), and energy conversion efficiency (η) were calculated. The highest , , and efficiency of these heterojunctions obtained using PANI-DBSA as a window layer (wideband gap) and Au as front contact are 1.8 mA/cm2, 0.436 V, and 0.13%, respectively. From Mott-Schottky plots, it was found that order of charge carrier concentrations is and /cm3 for the heterojunctions using Au as front contact under darknessness and illumination, respectively. Impedance study of this type of solar cell showed that the shunt resistance and series resistance decreased under illumination.