Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si

Table 3

Characteristic electronic parameters extracted from impedance spectroscopy of the herterojunctions under darkness and illumination.

	Electronic parameters
	Rs (Ω)	Rsh (kΩ)
Al/n-Si/PANI-DBSA/Au (darkness)
−1.0 V	103	41
−0.6 V	88	37
−0.2 V	85	50
0.0 V	116	40
0.2 V	100	40
0.6 V	70	25
1.0 V	21	20
Al/n-Si/PANI-DBSA/Au (illumination)
−1.0 V	25	0.650
−0.6 V	19	1.1
−0.2 V	26	3
0.0 V	34	7
0.2 V	33	30
0.6 V	17	12
1.0 V	37	3
Al/n-Si/PANI-DBSA/Ag (darkness)
−1.0 V	57	50
−0.6 V	103	30
−0.2 V	92	45
0.0 V	69	16
0.2 V	18	3
0.6 V	12	0.57
1.0 V	8	0.024
Al/n-Si/PANI-DBSA/Au (illumination)
−1.0 V	0	0.274
−0.6 V	0	0.214
−0.2 V	9	0.16
0.0 V	10	0.116
0.2 V	5	0.095
0.6 V	10	0.067
1.0 V	7	0.019