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International Journal of Photoenergy
Volume 2012, Article ID 946024, 7 pages
http://dx.doi.org/10.1155/2012/946024
Research Article

Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

Department of Electrical Engineering, Shahid Chamran University of Ahvaz, Ahvaz 61357-831351, Iran

Received 9 August 2011; Revised 26 September 2011; Accepted 30 September 2011

Academic Editor: Leonardo Palmisano

Copyright © 2012 Peyman Jelodarian and Abdolnabi Kosarian. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Peyman Jelodarian and Abdolnabi Kosarian, “Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect,” International Journal of Photoenergy, vol. 2012, Article ID 946024, 7 pages, 2012. https://doi.org/10.1155/2012/946024.