Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique

<table>(a) PL spectrum of samples ZR, ZI, ZI-v, and ZI-va. (b) Variation of <svg height="16.262501" id="M11" style="vertical-align:-3.36198pt" version="1.1" viewbox="0 0 67.574997 16.262501" width="67.574997" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,44.35,16.088)"><path d="M719 650v-28q-43 -2 -62 -15t-22 -44q-6 -47 -6 -169v-403h-31l-426 524h-2v-251q0 -111 6 -169q4 -37 24 -50.5t72 -16.5v-28h-237v28q45 2 64.5 16t23.5 49q6 62 6 171v220q0 54 -3 68.5t-17 32.5q-16 19 -34.5 26.5t-54.5 10.5v28h147l418 -502h3v246q0 117 -7 166
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</svg> and resistivity for various treatments to a sample.</table>

International Journal of Photoenergy

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Figure 1

Figure 1: Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique 