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International Journal of Photoenergy
Volume 2013, Article ID 108696, 9 pages
Research Article

Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate

1Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
2Department of Materials Science and Engineering, DaYeh University, Changhua 515, Taiwan

Received 14 June 2013; Revised 30 October 2013; Accepted 4 November 2013

Academic Editor: Antonino Bartolotta

Copyright © 2013 Ray-Hua Horng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This study involved analyzing the reliability of two types of III-V solar cells: (1) III-V solar cells grown on new and recycled gallium arsenide (GaAs) substrates and (2) the III-V solar cells transferred onto an electroplated nickel (Ni) substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO) process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs substrate was affected by the uneven surface morphology of the recycled GaAs substrate, which caused the propagation of these dislocations into the subsequently grown active layer of the solar cell. The III-V solar cells were transferred onto an electroplated Ni substrate, which was also fabricated by using CPELO technology. The degradation of the III-V thin-film solar cell after conducting a thermal shock test could have been caused by microcracks or microvoids in the active layer or interface of the heterojunction, which resulted in the reduction of the external quantum efficiency response and the increase of recombination loss.