Table 2: Deposition conditions of low-H and high-H.

ParameterValue
Low-HHigh-H

Power density (mW/cm2)2525
Pressure (Pa)9090
Electrode-to-substrate distance (mm)3030
Substrate temperature (°C)180180
SiH4 flow rate (sccm)4040
H2 flow rate (sccm)0320
Hydrogen content (%)618