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International Journal of Photoenergy
Volume 2013 (2013), Article ID 132105, 7 pages
Research Article

Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

1Department of Mechanical Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, Taiwan
2Department of Industrial Engineering, Shanghai Dianji University, Shanghai 201306, China
3Department of Mechanical Engineering, China University of Science and Technology, Taipei 11581, Taiwan

Received 3 January 2013; Revised 31 January 2013; Accepted 1 February 2013

Academic Editor: Ho Chang

Copyright © 2013 Chun-Yao Hsu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Cu(InGa)Se2 (CIGS) thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA), by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2) plane. A Cu-poor precursor with a Cu/( ) ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ) ratio of 1.15 exhibits an inappropriate second phase ( ) in the absorber. However, the precursor with a Cu/( ) ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.