Fabrication of a Cu(InGa)Se₂ Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

Figure 9

(a) The cross-sectional SEM image and (b) surface morphology of the CIGS film from the precursor with a Cu/(In+Ga) ratio of 0.95, deposited on a Mo-coated glass substrate.

(a)

(b)