Fabrication of a Cu(InGa)Se₂ Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

Table 2

The resistivity, carrier concentration, and Hall mobility of CIGS films.

Sample	Cu/(In + Ga)	Type	Sheet resistance (Ω/□)	Carrier concentration (cm^−3)	Mobility (cm^2 V^−1 s^−1)
A	0.790	P	1.7346𝐸+6	2.9969𝐸+14	8.1816𝐸+2
B	0.950	P	4.5617𝐸+5	2.3531𝐸+14	4.8521𝐸+2
C	1.217	P	9.4192𝐸+3	1.3566𝐸+14	5.9954𝐸+3