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International Journal of Photoenergy
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International Journal of Photoenergy
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2013
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Article
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Fig 3
/
Research Article
Radiation Damage in Electronic Memory Devices
Figure 3
The simulation of 50 keV protons passing through 0.5
μ
m thick layer of SiO
2
(500 events). (a) Trajectory of protons in
plane. (b) Distribution of stopped protons along the oxide depth.
(a)
(b)