Research Article
p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation
Table 2
Comparison of
and uniformity between POCl
3 diffusion and 4 different anneal processes.
| | (ohm/sq) | Ave | MAX | MIN | Uniformity |
| | POCL3 | 64.68 | 67.53 | 61.32 | 4.80% | | Anneal_810 | 70.02 | 73.08 | 68.96 | 2.94% | | Anneal_840 | 65.47 | 67.14 | 63.31 | 2.93% | | Anneal_870 | 61.39 | 63.07 | 59.65 | 2.79% | | Anneal_900 | 57.13 | 59.41 | 56.98 | 2.13% |
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