p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation

Table 6

Characteristics of POCl₃ diffusion and implantation processes.

	𝑈oc	𝐼sc	𝑅s	𝑅sh	FF	𝑁Cell	𝐼rev1
Baseline (POCl3)	0.622	8.96	2.50	756	79.07	18.08	0.03
Anneal_900	0.616	8.68	1.90	59.82	78.11	17.17	0.47
Anneal_870	0.623	8.89	2.26	42.71	78.00	17.76	0.65
Anneal_840	0.636	9.02	2.50	86.34	78.70	18.55	0.52
Anneal_810	0.632	9.04	2.60	83.43	78.15	18.37	0.55