Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers

Figure 1

Calculated distributions of P dopant concentration, total Fe concentration, interstitial Fe concentration, and electron lifetime (from the upper graph) after the gettering process at 700°C for 30 min. The lowest graph is the bulk Fe concentration by means of SIMS measurement of the UMG-Si gettered at 700°C for 5 hours.

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