Research Article

Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers

Figure 5

Calculated interstitial Fe concentration and the electron lifetime with (a) the temperature and (b) the time during the second step of the gettering process. The electron lifetime showed the highest value at the temperature of 600°C, where the interstitial Fe concentration indicated the lowest value. On the other hand, with the increase of the time they were saturated above 50 min.