Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers

<table><i>I</i>-<i>V</i> characteristics of the UMG-Si solar cells processed with one- and two-step gettering. The increase in the cell efficiency due to two-step gettering was 0.53% compared with that from one-step gettering.</table>

International Journal of Photoenergy

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Figure 7

Figure 7: Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers 