Table of Contents Author Guidelines Submit a Manuscript
International Journal of Photoenergy
Volume 2013, Article ID 364638, 6 pages
http://dx.doi.org/10.1155/2013/364638
Research Article

The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

Received 27 July 2013; Revised 24 October 2013; Accepted 28 October 2013

Academic Editor: Gaetano Di Marco

Copyright © 2013 Hung-Jung Hsu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Hung-Jung Hsu, Cheng-Hang Hsu, and Chuang-Chuang Tsai, “The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer,” International Journal of Photoenergy, vol. 2013, Article ID 364638, 6 pages, 2013. https://doi.org/10.1155/2013/364638.