The Effect of Bandgap Graded Absorber on the Performance of a-Si_1–xGe_x:H Single-Junction Cells with μc-SiO_x:H N-Type Layer

Figure 3

Absorptance (𝐴) and EQE of a-Si_1−xGe_x:H single-junction cells measured with 0 V and −0.5 V biases as a function of the p/i grading width. The p/i grading width was changed from 0 to 70 nm meanwhile keeping the total thickness of the absorber as 230 nm for all the cells.