364638.fig.003
Figure 3: Absorptance ( ) and EQE of a-Si1−xGex:H single-junction cells measured with 0 V and −0.5 V biases as a function of the p/i grading width. The p/i grading width was changed from 0 to 70 nm meanwhile keeping the total thickness of the absorber as 230 nm for all the cells.