The Effect of Bandgap Graded Absorber on the Performance of a-Si_1–xGe_x:H Single-Junction Cells with μc-SiO_x:H N-Type Layer

Figure 4

The performance of a-Si_1−xGe_x:H single-junction cells as a function of the p/i grading width under illumination of AM1.5G light source. The p/i grading width was changed from 0 to 70 nm meanwhile keeping the total thickness of the absorber at 230 nm for all the cells. The lines were drawn to guide the eye.

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