The Effect of Bandgap Graded Absorber on the Performance of a-Si_1–xGe_x:H Single-Junction Cells with μc-SiO_x:H N-Type Layer

Figure 5

Absorptance (𝐴) and EQE of a-Si_1−xGe_x:H single-junction cells as a function of the i/n grading width. The i/n grading width was changed from 0 to 180 nm meanwhile keeping the p/i grading width and the total thickness of the absorber at 15 and 230 nm, respectively.