Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="372869.fig.005a" src="https://static.hindawi.com/articles/ijp/volume-2013/372869/figures/372869.fig.005a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Annealing in argon ambience</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="372869.fig.005b" src="https://static.hindawi.com/articles/ijp/volume-2013/372869/figures/372869.fig.005b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Annealing in argon and nitrogen ambients</td></tr></table></td></tr></table>

<table>(a) Current-voltage (<i>I-V</i>) characteristic of the ultraviolet (UV) photodetector with Pt/ZnO nanobilayer films structure annealed in argon ambience at different temperatures (350°C, 450°C, and 550°C), and the inset showed the schematic structure of UV photodetector device. (b) The dark <i>I-V</i> characteristic of the Pt/ZnO nanobilayer structure annealed at 450°C in argon and nitrogen ambients, respectively.</table>

International Journal of Photoenergy

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Figure 5

Figure 5: Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors 